EFFECTS OF ANNEALING TEMPERATURE ON THE PHOTOLUMINESCENCE PROPERTIES OF ZRO2 THIN FILMS
DOI:
https://doi.org/10.59743/jbs.v29i.68Keywords:
Photoluminescence, Zirconium, Thin film, AnnealingAbstract
This work aims to describe the photoluminescence (PL) of zirconium oxide (ZrO2) thin films synthesized using anodization method.ZrO2 thin film are annealed at different temperatures (200,400, and 600 oC). PL excitation and emission spectra were also recorded and investigated. When the material was excited by different wavelengths, several emission bands were observed in the range of 300-500nm. The increase of PL intensity with elevation of annealing temperature is related to reduction of OH groups, increase in the crystallinity and reduction in the non-radiative related defects. The luminescence dependence on defects in the film makes it suitable for luminescent.
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